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Proceedings Paper

TiN growth by hybrid radical beam-PLD for Si barrier metal
Author(s): Kotaro Obata; Koji Sugioka; Koichi Toyoda; Hiroshi Takai; Katsumi Midorikawa
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Paper Abstract

Combination of PLD and nitrogen radical beam has grown high quality TiN films on Si substrate without silicidation at the interface between TiN thin film and Si substrate even at growth temperature more than 700 degrees C. Additionally, X- ray photoelectron spectroscopy revealed that this method achieved synthesis of almost stoichiometric TiN films. Diffusion barrier characteristics of the grown film were examined by deposition of Al thin films of about 400 nm thick on the TiN grown films, followed by post-thermal treatment at 500 degrees C for 30 minutes. Scanning electron microscopy (SEM) observation and Rutherford backscattering spectroscopy analysis revealed that sharp interfaces between Al and TiN were maintained after the thermal treatment, indicating excellent property of the TiN films as Si barrier metal.

Paper Details

Date Published: 7 June 2000
PDF: 8 pages
Proc. SPIE 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V, (7 June 2000); doi: 10.1117/12.387552
Show Author Affiliations
Kotaro Obata, RIKEN--The Institute of Physical and Chemical Research and Science Univ. of Tokyo (Japan)
Koji Sugioka, RIKEN--The Institute of Physical and Chemical Research (Japan)
Koichi Toyoda, Science Univ. of Tokyo (Japan)
Hiroshi Takai, Tokyo Denki Univ. (Japan)
Katsumi Midorikawa, RIKEN--The Institute of Physical and Chemical Research (Japan)


Published in SPIE Proceedings Vol. 3933:
Laser Applications in Microelectronic and Optoelectronic Manufacturing V
Henry Helvajian; Koji Sugioka; Malcolm C. Gower; Jan J. Dubowski, Editor(s)

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