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Proceedings Paper

Effect of film thickness on the properties of indium tin oxide thin film grown by pulsed-laser deposition for organic light-emitting diodes
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Paper Abstract

Transparent conducting indium tin oxide (ITO) thin films were grown by pulsed laser deposition (PLD) on glass substrates. The structural, electrical and optical properties of these films were investigated as a function of film thickness. Films were deposited using a KrF excimer laser at a fluence of 2 J/cm2, at substrate temperature of 300 degrees C and 10 mTorr of oxygen pressure. For ITO films deposited at 300 degrees C in 10 mTorr of oxygen pressure, the resistivity of 2-4 X 10-4 (Omega) - cm was observed and the average transmission in the visible range was about 85-90 percent. The Hall mobility and carrier density for ITO films were observed to be in the range of 24-27 cm2/V-s and 5-9 X 1020 cm-3, respectively. We have used the ITO thin films, deposited by PLD on silica substrates, as the anode contact in organic light emitting devices and studied the effect of ITO film thickness on the device performance. The optimum thickness of the ITO anode for the maximum device efficiency was observed to be about 500-1000 angstrom. The device shoed an external quantum efficiency of about 0.8 percent at 100 A/m2.

Paper Details

Date Published: 7 June 2000
PDF: 10 pages
Proc. SPIE 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V, (7 June 2000); doi: 10.1117/12.387550
Show Author Affiliations
Heungsoo Kim, George Washington Univ. (United States)
James S. Horwitz, Naval Research Lab. (United States)
Alberto Pique, Naval Research Lab. (United States)
Gary P. Kushto, Naval Research Lab. (United States)
Zakya H. Kafafi, Naval Research Lab. (United States)
C. M. Gilmore, George Washington Univ. (United States)
Douglas B. Chrisey, Naval Research Lab. (United States)


Published in SPIE Proceedings Vol. 3933:
Laser Applications in Microelectronic and Optoelectronic Manufacturing V
Henry Helvajian; Koji Sugioka; Malcolm C. Gower; Jan J. Dubowski, Editor(s)

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