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Proceedings Paper

Nonlinear optical characterization of silicon wafers: in-situ detection of stacking faults and external stress
Author(s): Juergen Reif; Thomas Schneider; Reiner P. Schmid; Dirk Wolfframm
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Paper Abstract

Femtosecond second harmonic generation from the surface of as-grown 6-inch silicon wafers is used as a tool for in-situ characterization. Czochralski-grown crystal are not homogeneous over their cross section. A central zone of vacancy-rich and as outer zone of interstitial-rich crystal are separated by a ring of stacking faults. Gate oxide layers grown on such substrate show different quality in their dielectric properties, making it desirable to locate these zones before producing different devices. Exploiting the symmetry sensitivity of surface SHG, we use a particular two-pulse arrangement, similar to a conventional pump-probe setup, to obtain a non-destructive, in-situ information about the location of the three different crystal zones. Further, we demonstrate the potential of surface SHG to monitor external stress, exerted on the sample for instance by improper mounting, providing a tool for on-line optimization of process parameters. Finally, the applicability of the technique for on-line analysis and control during the growth of different types of gate dielectrics is discussed.

Paper Details

Date Published: 7 June 2000
PDF: 7 pages
Proc. SPIE 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V, (7 June 2000); doi: 10.1117/12.387541
Show Author Affiliations
Juergen Reif, Brandenburgische Technische Univ. Cottbus (Germany)
Thomas Schneider, Brandenburgische Technische Univ. Cottbus (Germany)
Reiner P. Schmid, Brandenburgische Technische Univ. Cottbus (Germany)
Dirk Wolfframm, Brandenburgische Technische Univ. Cottbus (Germany)

Published in SPIE Proceedings Vol. 3933:
Laser Applications in Microelectronic and Optoelectronic Manufacturing V
Henry Helvajian; Koji Sugioka; Malcolm C. Gower; Jan J. Dubowski, Editor(s)

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