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Proceedings Paper

Metrology issues of reticles with optical proximity correction-assist features using the atomic force microscope
Author(s): Kuo-Jen Chao; Robert J. Plano; Jeffrey R. Kingsley
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Paper Abstract

Critical dimension (CD) control is very important for the successful fabrication of integrated circuit (IC) devices. Line-widths of patterns such as chrome lines or clear lines on the reticle have to be monitored. In this work, reticles with optical proximity correction (OPC) assist features intended for deep ultraviolet (DUV) exposure have been investigated using the atomic force microscope (AFM). Metrology issues related to using AFM to measure CD are presented. A line-width determination method to produce a consistent CD measurement is proposed. The CD uniformity for a 4X, 6' reticle intended for DUV exposure is found to be within plus or minus 20 nm over a range of 2.00 micrometer to 0.4 micrometer and to be worse when the widths of the lines are nominally less than 0.4 micrometer.

Paper Details

Date Published: 2 June 2000
PDF: 8 pages
Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386533
Show Author Affiliations
Kuo-Jen Chao, Charles Evans & Associates (United States)
Robert J. Plano, Charles Evans & Associates (United States)
Jeffrey R. Kingsley, Charles Evans & Associates (United States)


Published in SPIE Proceedings Vol. 3998:
Metrology, Inspection, and Process Control for Microlithography XIV
Neal T. Sullivan, Editor(s)

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