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Proceedings Paper

At-wavelength characterization of DUV-radiation-induced damage in fused silica
Author(s): Sang Hun Lee; Fan Piao; Patrick P. Naulleau; Kenneth A. Goldberg; William G. Oldham; Jeffrey Bokor
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Paper Abstract

Fused silica is the optical material of choice for deep ultraviolet (DUV) lithographic systems. However, this material is subject to irradiation-induced compaction with ArF excimer radiation. Here we report direct, at-wavelength, wavefront measurements of DUV-laser-damaged fused silica samples performed using phase-shifting point diffraction interferometry (PS/PDI). Experimental results show that the damage anneals in the temperature range of 200 to approximately 600 degrees Celsius. Finally, the interferometric measurements are compared to birefringence studies performed on the same samples.

Paper Details

Date Published: 2 June 2000
PDF: 8 pages
Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386529
Show Author Affiliations
Sang Hun Lee, Univ. of California/Berkeley and Lawrence Berkeley National Lab. (United States)
Fan Piao, Univ. of California/Berkeley (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
William G. Oldham, Univ. of California/Berkeley (United States)
Jeffrey Bokor, Univ. of California/Berkeley and Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 3998:
Metrology, Inspection, and Process Control for Microlithography XIV
Neal T. Sullivan, Editor(s)

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