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Proceedings Paper

Monte Carlo model of charging in resists in e-beam lithography
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Paper Abstract

Charging effects on beam deflection of incident electrons in electron beam lithography are investigated. We shows first in detail how the non-unity yield of electron generation in insulator resist leads to local charging accumulation and affects the beam deflection of incident electrons as charging develops. Then the amounts of beam deflection are identified for various operating and resist dimension conditions, and then we conclude that the beam deflection should be avoided for more accurate manufacturing semiconductor devices by the control of charging effects.

Paper Details

Date Published: 2 June 2000
PDF: 9 pages
Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386526
Show Author Affiliations
Yeong-Uk Ko, Univ. of Tennessee/Knoxville (United States)
Justin J. Hwu, Univ. of Tennessee/Knoxville (United States)
David C. Joy, Univ. of Tennessee/Knoxville and Oak Ridge National Lab. (United States)

Published in SPIE Proceedings Vol. 3998:
Metrology, Inspection, and Process Control for Microlithography XIV
Neal T. Sullivan, Editor(s)

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