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Proceedings Paper

Pitch-dependent intrafield dimensional offsets in advanced lithography
Author(s): Christine Wallace; Brian Martin; Graham G. Arthur
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Paper Abstract

The variation of dimensional control between center and edge of a stepper lens field is measured both practically and by lithography simulation for both lines and slots at various pitches. Results for lines show that the sign of the center- edge offset is pitch dependent but for slots the dimension is always larger at center field irrespective of pitch.

Paper Details

Date Published: 2 June 2000
PDF: 7 pages
Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386519
Show Author Affiliations
Christine Wallace, Mitel Semiconductor (France)
Brian Martin, Mitel Semiconductor (United Kingdom)
Graham G. Arthur, Rutherford Appleton Lab. (United Kingdom)


Published in SPIE Proceedings Vol. 3998:
Metrology, Inspection, and Process Control for Microlithography XIV
Neal T. Sullivan, Editor(s)

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