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Proceedings Paper

Optimum design for optical proximity correction in submicron bipolar technology using critical shape error analysis
Author(s): Graham G. Arthur; Brian Martin; Christine Wallace
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Paper Abstract

A production application of optical proximity correction (OPC) aimed at reducing corner-rounding and line-end shortening is described. The methodology, using critical shape error analysis, to calculate the correct serif size is given and is extended to show the effect of OPC on the process window (i.e. depth-of-focus and exposure latitude). The initial calculations are made using the lithography simulation tools PROLITH/2 and SOLID-C, the results of which are transferred to the photo-cell for practical results.

Paper Details

Date Published: 2 June 2000
PDF: 10 pages
Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386516
Show Author Affiliations
Graham G. Arthur, Rutherford Appleton Lab. (United Kingdom)
Brian Martin, Mitel Semiconductor (United Kingdom)
Christine Wallace, Mitel Semiconductor (France)


Published in SPIE Proceedings Vol. 3998:
Metrology, Inspection, and Process Control for Microlithography XIV
Neal T. Sullivan, Editor(s)

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