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Proceedings Paper

FIB metrology in advanced lithography
Author(s): Drew Barnes; Christian R. Musil; Don E. Yansen
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Paper Abstract

We present the results of a DARPA sponsored study on the application of Focused Ion Beam (FIB) systems to metrology in advanced lithography for production and process development. Data on top-down measurements, on the effects of FIB imaging, and on milling strategies for cross-sectional preparation are presented for fine-line resist structures. In addition, some preliminary aspects of Ga contamination are addressed in the context of the residual dose and concentration leftover from FIB processing. A standard deviation of 8 nm for the measured line width was observed, which makes FIB metrology competitive with the more established technique of CD SEM analysis.

Paper Details

Date Published: 2 June 2000
PDF: 9 pages
Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386504
Show Author Affiliations
Drew Barnes, FEI Co. (United States)
Christian R. Musil, FEI Co. (United States)
Don E. Yansen, FEI Co. (United States)


Published in SPIE Proceedings Vol. 3998:
Metrology, Inspection, and Process Control for Microlithography XIV
Neal T. Sullivan, Editor(s)

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