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Proceedings Paper

The Neolithography Consortium
Author(s): James E. Potzick
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Paper Abstract

The role of process simulation in microlithography is becoming an increasingly important part of process control as wafer feature sizes become smaller than the exposure wavelength, because the pattern transfer from photomask to wafer is nonlinear. An important factor hindering the increased use of simulation applications, however, is their inclination to be standalone applications not easily integrated into the overall process. These observations have led to the concept of The Neolithography Consortium. Neolithography is a realization and acceptance that the pattern on the photomask is not replicated exactly on the wafer because of diffraction effects, subresolution mask features and imperfections, and other effects. It is characterized by the full integration of process simulation and metrology into the IC microlithography process, leading to a comprehensive and logical approach to photomask design and wafer exposure. All of the relevant optical projection, resist exposure and development, and etch parameters, and resolution enhancement techniques are optimized and incorporated into the photomask design before the first wafer is printed. The Neolithography Consortium is being formed for the purpose of accelerating the adoption of neolithography, by identifying impediments to the integration of simulation and metrology tools into the microlithography process and finding solutions to remove these impediments. It is comprised of companies who create or use commercial IC microlithography simulation software, or who supply metrology or production tools which will interface with simulation software. Any company or organization with a legitimate interest is welcome to join.

Paper Details

Date Published: 2 June 2000
PDF: 8 pages
Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386503
Show Author Affiliations
James E. Potzick, National Institute of Standards and Technology (United States)

Published in SPIE Proceedings Vol. 3998:
Metrology, Inspection, and Process Control for Microlithography XIV
Neal T. Sullivan, Editor(s)

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