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Proceedings Paper

193-nm scanner characterization by SEM and electrical CD measurements
Author(s): Laurent Pain; Yorick Trouiller; Alexandra Barberet; O. Guirimand; Gilles L. Fanget; N. Martin; Yves Quere; M. E. Nier; Emile Lajoinie; Didier Louis; Michel Heitzmann; P. Scheiblin; A. Toffoli
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Paper Abstract

193 nm lithography is expected today to be an emerging solution for the development and the production of future integrated circuits based on sub 150 nm design rules. However the characterization and the evaluation of these tools require a lot of effort due to the 193 nm resist behavior during SEM observations. This paper presents the process flow chart to allow the evaluation of a ASM-L 5500/900 193 nm scanner by electrical measurement and the stack used for this study. After the validation of this flow chart, this work gives an overview of the ASM-L 5500/900 performances.

Paper Details

Date Published: 2 June 2000
PDF: 12 pages
Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386499
Show Author Affiliations
Laurent Pain, CEA-LETI (France)
Yorick Trouiller, CEA-LETI (France)
Alexandra Barberet, CEA-LETI (France)
O. Guirimand, CEA-LETI (France)
Gilles L. Fanget, CEA-LETI (France)
N. Martin, STMicroelectronics (France)
Yves Quere, CEA-LETI (France)
M. E. Nier, STMicroelectronics (France)
Emile Lajoinie, STMicroelectronics (France)
Didier Louis, CEA-LETI (France)
Michel Heitzmann, CEA-LETI (France)
P. Scheiblin, CEA-LETI (France)
A. Toffoli, CEA-LETI (France)


Published in SPIE Proceedings Vol. 3998:
Metrology, Inspection, and Process Control for Microlithography XIV
Neal T. Sullivan, Editor(s)

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