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Proceedings Paper

Experiments in mask metrology using a CD AFM
Author(s): Martin A. Klos; Sanjay K. Yedur
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Paper Abstract

CD AFM (Critical Dimension Atomic Force Microscopy) offers a potential advantage in mask metrology not found in more common techniques: sidewall profiling. The uncertainty of CD width measurement can be reduced because the sidewall positions are found directly, instead of relying on an interpretation of brightness as with other methods. And, unlike with the other techniques, a thickness measurement is available. To demonstrate that this potential could be realized in a production environment, a real CD AFM tool was used to run CD long-term precision measurements on etched masks. Results indicate that a precision in width measurements of 3 nm at 3(sigma) can be achieved. Preliminary results for resist masks indicate that a similar performance is possible. Masks, as opposed to wafers, present additional complications for CD AFM. These problems and their solutions are discussed. Calibration techniques are also presented, as they are a crucial concern in metrology.

Paper Details

Date Published: 2 June 2000
PDF: 12 pages
Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386491
Show Author Affiliations
Martin A. Klos, IBM Corp. (United States)
Sanjay K. Yedur, Peak XV Networks (United States)


Published in SPIE Proceedings Vol. 3998:
Metrology, Inspection, and Process Control for Microlithography XIV
Neal T. Sullivan, Editor(s)

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