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Proceedings Paper

Process-induced defects in sub-0.15-nm device patterning using 193-nm lithography
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Paper Abstract

Process induced defects in sub-0.15 micrometer devices patterned on 193-nm photoresists have been studied and related to the physical and rheological properties of these polymers, as well as to the interaction of the photoresists with the two principal track-related unit operations: spin-coating and development. Studies on unpatterned wafers with these photoresists were conducted to elucidate the dependence of defectivity and defect types on spin coating parameters. Imaging was done on a full-field ASML 193 nm scanner and the resist processing was performed on a TEL MARK-8 track. Defect inspection was performed with a KLA 2132, KLA SP1 bright field inspection systems, and defect review was carried out with JEOL 7515 SEM tool. Results indicate that defectivity of an optimized 193-nm resist process is comparable to a well- optimized 248-nm baseline resist process. It was found that 193-nm resists suffer from the same residue problems as those of 248-nm. Yield data obtained on 193-nm and 248-nm resists processed under optimized conditions demonstrate that the 193- nm resist process is capable performance comparable to that of a baseline 248-nm resist process.

Paper Details

Date Published: 2 June 2000
PDF: 7 pages
Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386482
Show Author Affiliations
Uzodinma Okoroanyanwu, Advanced Micro Devices, Inc. (United States)
Christopher Pike, Advanced Micro Devices, Inc. (United States)
Harry J. Levinson, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 3998:
Metrology, Inspection, and Process Control for Microlithography XIV
Neal T. Sullivan, Editor(s)

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