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Proceedings Paper

New process monitor for reticles and wafers: the MEEF meter
Author(s): Franklin M. Schellenberg; Pat LaCour; Olivier Toublan; Geoffrey T. Anderson; Raymond Yip
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Paper Abstract

In this paper, we present experimental results with a prototype design of a 'MEEF Meter,' and investigate its sensitivity to defocus and exposure changes. We find that the results of the MEEF meter complement the results obtained through conventional CD metrology, with conventional CDs being a good indicator of exposure changes, while the MEEF meter is a good indicator of defocus changes. We also investigate two kinds of MEEF meter, a dense MEEF meter and 'Process' MEEF meter design, and find the results for MEEF similar, but that the 'Process' MEEF meter design is far more susceptible to noise and bridging.

Paper Details

Date Published: 2 June 2000
PDF: 8 pages
Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386471
Show Author Affiliations
Franklin M. Schellenberg, Mentor Graphics (United States)
Pat LaCour, Mentor Graphics (United States)
Olivier Toublan, Mentor Graphics (France)
Geoffrey T. Anderson, KLA-Tencor Corp. (United States)
Raymond Yip, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 3998:
Metrology, Inspection, and Process Control for Microlithography XIV
Neal T. Sullivan, Editor(s)

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