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Proceedings Paper

Process control and optimization of conventional metal process for 0.18-micron logic technology
Author(s): Ramkumar Subramanian; Stuart E. Brown; Susan H. Chen; Carmen Morales; Ernesto Gallardo; Bhanwar Singh
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Paper Abstract

In this paper we describe the process control and optimization strategy for a conventional metal process for 0.18-micrometer technology. It is well known that the interaction of DUV resists with substrates containing nitrogen, e.g. TiN, leads to resist footing. A technique to minimize this interaction and improve CD control will be presented. We then present process optimization strategies including substrate optimization, resist thickness optimization, and use of top- anti-reflective coating. A comparison of reflectivity simulations with CD control will also be shown. DOF with varying substrate thicknesses will be presented. Strategies for CD control in sub-0.18 micrometer metal patterning will also be presented.

Paper Details

Date Published: 2 June 2000
PDF: 9 pages
Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386470
Show Author Affiliations
Ramkumar Subramanian, Advanced Micro Devices, Inc. (United States)
Stuart E. Brown, Advanced Micro Devices, Inc. (United States)
Susan H. Chen, Advanced Micro Devices, Inc. (United States)
Carmen Morales, Advanced Micro Devices, Inc. (United States)
Ernesto Gallardo, Advanced Micro Devices, Inc. (United States)
Bhanwar Singh, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 3998:
Metrology, Inspection, and Process Control for Microlithography XIV
Neal T. Sullivan, Editor(s)

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