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Proceedings Paper

Process window metrology
Author(s): Christopher P. Ausschnitt; William Chu; Linda M. Hadel; Hok Ho; Peter Talvi
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Paper Abstract

This paper is the third of a series that defines a new approach to in-line lithography control. The first paper described the use of optically measurable line-shortening targets to enhance signal-to-noise and reduce measurement time. The second described the dual-tone optical critical dimension (OCD) measurement and analysis necessary to distinguish dose and defocus. Here we describe the marriage of dual-tone OCD to SEM-CD metrology that comprises what we call 'process window metrology' (PWM), the means to locate each measured site in dose and focus space relative to the allowed process window. PWM provides in-line process tracking and control essential to the successful implementation of low-k lithography.

Paper Details

Date Published: 2 June 2000
PDF: 9 pages
Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386468
Show Author Affiliations
Christopher P. Ausschnitt, IBM Corp. (United States)
William Chu, IBM Corp. (United States)
Linda M. Hadel, IBM Corp. (United States)
Hok Ho, IBM Corp. (United States)
Peter Talvi, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 3998:
Metrology, Inspection, and Process Control for Microlithography XIV
Neal T. Sullivan, Editor(s)

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