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Proceedings Paper

Manufacturing considerations for implementation of scatterometry for process monitoring
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Paper Abstract

The continuing demand for higher frequency microprocessors and larger memory arrays has led to decreasing device dimensions and smaller process control windows. Decreasing process control windows have created a need for higher precision metrology to maintain an acceptable precision to tolerance ratio with a reasonable sampling rate. In order to determine and reduce across chip, across wafer, and across lot linewidth variations, higher sampling is required which, in turn, demands faster move acquire measure (MAM) times to maintain throughput. Finally, the need to detect and quantify sidewall angle changes in addition to CD measurements is becoming critical. Spectroscopic Scatterometry is a metrology technique which offers the potential to meet these requirements. This work explores some of the fundamental technology concerns for implementing scatterometry in a manufacturing environment. These concerns include mark requirements and characterization necessary for library generation. Comparison of scatterometry data to in-line CD SEM, x-section SEM, and AFM results will be presented.

Paper Details

Date Published: 2 June 2000
PDF: 10 pages
Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386465
Show Author Affiliations
John A. Allgair, Motorola (United States)
David C. Benoit, Motorola (United States)
Robert R. Hershey, Motorola (United States)
Lloyd C. Litt, Motorola (United States)
Ibrahim S. Abdulhalim, KLA-Tencor Corp. (United States)
William Braymer, KLA-Tencor Corp. (United States)
Michael Faeyrman, KLA-Tencor Corp. (Israel)
John Charles Robinson, KLA-Tencor Corp. (United States)
Umar K. Whitney, KLA-Tencor Corp. (United States)
Yiping Xu, KLA-Tencor Corp. (United States)
Piotr Zalicki, KLA-Tencor Corp. (United States)
Joel L. Seligson, KLA-Tencor Corp. (Israel)


Published in SPIE Proceedings Vol. 3998:
Metrology, Inspection, and Process Control for Microlithography XIV
Neal T. Sullivan, Editor(s)

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