Share Email Print
cover

Proceedings Paper

Phase profilometry for the 193-nm lithography gate stack
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Phase Profilometry (PP) has been proposed for in-situ/in-line critical dimension and profile measurements. This is usually accomplished by using rigorous electromagnetic theory to simulate the optical responses of gratings with different profiles, and by using spectroscopic ellipsometry/reflectometry to measure 1-D gratings. In this paper, phase profilometry is applied to the lithography process for cross-sectional profile extraction metrology. A focus-exposure experiment was conducted using Sematech's 193 nm lithography tool. Comparison between the measurements from CD-SEM, CD-AFM and PP are discussed and explained.

Paper Details

Date Published: 2 June 2000
PDF: 9 pages
Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386464
Show Author Affiliations
Nickhil H. Jakatdar, Timbre Technology, Inc. (United States)
Xinhui Niu, Timbre Technology, Inc. (United States)
Junwei Bao, Univ. of California/Berkeley (United States)
Costas J. Spanos, Univ. of California/Berkeley (United States)
Sanjay K. Yedur, International SEMATECH (United States)
Alain G. Deleporte, International SEMATECH (France)


Published in SPIE Proceedings Vol. 3998:
Metrology, Inspection, and Process Control for Microlithography XIV
Neal T. Sullivan, Editor(s)

© SPIE. Terms of Use
Back to Top