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Proceedings Paper

Phase profilometry for the 193-nm lithography gate stack
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Paper Abstract

Phase Profilometry (PP) has been proposed for in-situ/in-line critical dimension and profile measurements. This is usually accomplished by using rigorous electromagnetic theory to simulate the optical responses of gratings with different profiles, and by using spectroscopic ellipsometry/reflectometry to measure 1-D gratings. In this paper, phase profilometry is applied to the lithography process for cross-sectional profile extraction metrology. A focus-exposure experiment was conducted using Sematech's 193 nm lithography tool. Comparison between the measurements from CD-SEM, CD-AFM and PP are discussed and explained.

Paper Details

Date Published: 2 June 2000
PDF: 9 pages
Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386464
Show Author Affiliations
Nickhil H. Jakatdar, Timbre Technology, Inc. (United States)
Xinhui Niu, Timbre Technology, Inc. (United States)
Junwei Bao, Univ. of California/Berkeley (United States)
Costas J. Spanos, Univ. of California/Berkeley (United States)
Sanjay K. Yedur, International SEMATECH (United States)
Alain G. Deleporte, International SEMATECH (France)

Published in SPIE Proceedings Vol. 3998:
Metrology, Inspection, and Process Control for Microlithography XIV
Neal T. Sullivan, Editor(s)

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