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Proceedings Paper

Specular spectroscopic profilometry for the sub-0.18-um polySi-gate processes
Author(s): Xinhui Niu; Nickhil H. Jakatdar; Sanjay K. Yedur; Bhanwar Singh
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Paper Abstract

Specular Spectroscopic Profilometry (SSP), or Phase Profilometry (PP), has been proposed for in-situ/in-line patterned thin-film measurements. This is usually accomplished by using a rigorous electromagnetic theory to simulate the optical responses of gratings with different profiles, and by using spectroscopic ellipsometry/reflectometry to measure 1-D gratings. In this paper, specular spectroscopic profilometry is applied in DUV lithography and etch processes as a profile extraction metrology. One focus-exposure experiment is conducted by using 0.18 micrometer lithography technology, another focus-exposure experiment is conducted by using 0.18 micrometer lithography and etch technology. Comparison between the measurement from CD-SEM, CD-AFM and PP are discussed and explained.

Paper Details

Date Published: 2 June 2000
PDF: 10 pages
Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386449
Show Author Affiliations
Xinhui Niu, Timbre Technology, Inc. (United States)
Nickhil H. Jakatdar, Timbre Technology, Inc. (United States)
Sanjay K. Yedur, Advanced Micro Devices, Inc. (United States)
Bhanwar Singh, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 3998:
Metrology, Inspection, and Process Control for Microlithography XIV
Neal T. Sullivan, Editor(s)

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