Share Email Print
cover

Proceedings Paper

Aluminum-induced lateral crystallization of amorphous silicon thin films
Author(s): Rui Rao; Zhongyang Xu; Xuecheng Zou; Guocai Sun
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A new process for low-temperature crystallization of amorphous Si (a-Si) films, metal-induced lateral crystallization (MILC), was developed. In our work, Al metal was adopted for the purpose of enhancing the crystallization of a-Si. The a-Si films right under the Al films were crystallized to the poly-Si films at the initial stage of annealing. These crystalline seeds were then grown laterally into Al-free area without further nucleation (lateral crystallization), thus obtaining large-grained poly-Si films with no metal contamination. The crystallinity was examined by Raman spectroscopy and X-ray diffraction. The results show that during MILC, the lowest temperature of Al induced lateral crystallization is about 300 degree(s)C and the crystallinity was enhanced while the temperature increased. This low temperature contamination-free lateral crystallization phenomenon may be applicable to the low temperature fabrication of poly-Si TFTs on the glass substrates.

Paper Details

Date Published: 9 May 2000
PDF: 3 pages
Proc. SPIE 4077, International Conference on Sensors and Control Techniques (ICSC 2000), (9 May 2000); doi: 10.1117/12.385531
Show Author Affiliations
Rui Rao, Huazhong Univ. of Science and Technology (China)
Zhongyang Xu, Huazhong Univ. of Science and Technology (China)
Xuecheng Zou, Huazhong Univ. of Science and Technology (China)
Guocai Sun, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 4077:
International Conference on Sensors and Control Techniques (ICSC 2000)

© SPIE. Terms of Use
Back to Top