Share Email Print
cover

Proceedings Paper

Effects of Bi4Ti3O12 doping on the electrical properties of low breakdown voltage ZnO varistors
Author(s): Tianjin Zhang; Xiangrong Yang
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The regularity of the effect of Bi4Ti3O12-doped on the electrical properties of low voltage ZnO varistor was studied. The effects of annealing temperature on the electric characteristics of samples were discussed and the mechanism of Bi4Ti3O12-doped was analyzed. It is found that the electric properties of Bi4Ti3O12- doped samples are better than Bi2O3- and TiO2- doped samples, and the samples of Bi4Ti3O12- doped can overcome the weakness of Bi2O3 volatilization at high temperature. For 0.5mol% Bi4Ti3O12-doped samples sintered at 1280 degree(s)C for 2h, the electric properties were that V1mA equals 45v, (alpha) > 32, IL < 3 (mu) A.

Paper Details

Date Published: 9 May 2000
PDF: 4 pages
Proc. SPIE 4077, International Conference on Sensors and Control Techniques (ICSC 2000), (9 May 2000); doi: 10.1117/12.385524
Show Author Affiliations
Tianjin Zhang, Hubei Univ. (China)
Xiangrong Yang, Hubei Univ. (China)


Published in SPIE Proceedings Vol. 4077:
International Conference on Sensors and Control Techniques (ICSC 2000)
Desheng Jiang; Anbo Wang, Editor(s)

© SPIE. Terms of Use
Back to Top