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Proceedings Paper

Effects of Bi4Ti3O12 doping on the electrical properties of low breakdown voltage ZnO varistors
Author(s): Tianjin Zhang; Xiangrong Yang
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Paper Abstract

The regularity of the effect of Bi4Ti3O12-doped on the electrical properties of low voltage ZnO varistor was studied. The effects of annealing temperature on the electric characteristics of samples were discussed and the mechanism of Bi4Ti3O12-doped was analyzed. It is found that the electric properties of Bi4Ti3O12- doped samples are better than Bi2O3- and TiO2- doped samples, and the samples of Bi4Ti3O12- doped can overcome the weakness of Bi2O3 volatilization at high temperature. For 0.5mol% Bi4Ti3O12-doped samples sintered at 1280 degree(s)C for 2h, the electric properties were that V1mA equals 45v, (alpha) > 32, IL < 3 (mu) A.

Paper Details

Date Published: 9 May 2000
PDF: 4 pages
Proc. SPIE 4077, International Conference on Sensors and Control Techniques (ICSC 2000), (9 May 2000); doi: 10.1117/12.385524
Show Author Affiliations
Tianjin Zhang, Hubei Univ. (China)
Xiangrong Yang, Hubei Univ. (China)


Published in SPIE Proceedings Vol. 4077:
International Conference on Sensors and Control Techniques (ICSC 2000)
Desheng Jiang; Anbo Wang, Editor(s)

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