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Proceedings Paper

Analysis of 1/f noise in CMOS APS
Author(s): Hui Tian; Abbas El Gamal
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Paper Abstract

As CMOS technology scales, the effect of 1/f noise on low frequency analog circuits such as CMOS image sensors becomes more pronounced, and therefore must be more accurately estimated. analysis of 1/f noise is typically performed in the frequency domain even though the process is nonstationary. To find out if the frequency domain analysis produces acceptable results, the paper introduces a time domain method based on a nonstationary extension of a recently developed, and generally agreed upon physical model for 1/f noise in MOS transistors. The time domain method is used to analyze the effect of 1/f noise due to pixel level transistors in a CMOS APS. The results show that the frequency domain results can be quite inaccurate especially in estimating the 1/f noise effect of the reset transistor. It is also shown that CDS does not in general reduce the effect of the 1/f noise.

Paper Details

Date Published: 15 May 2000
PDF: 9 pages
Proc. SPIE 3965, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications, (15 May 2000); doi: 10.1117/12.385433
Show Author Affiliations
Hui Tian, Stanford Univ. (United States)
Abbas El Gamal, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 3965:
Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications
Morley M. Blouke; Nitin Sampat; Thomas Yeh; Nitin Sampat; George M. Williams; Thomas Yeh, Editor(s)

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