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Proceedings Paper

Total dose effects on CMOS active pixel sensors
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Paper Abstract

Co60 irradiations have been carried out on test structures for the development of CMOS Active Pixel Sensors that can be used in a radiation environment. The basic mechanisms that may cause failure are presented. Ionization induced damage effects such as field leakage currents and dark current increase are discussed in detail. Two different approaches to overcome these problems are considered and their advantages and disadvantages are compared. Total dose results are presented on a pixel that can tolerate more than 200 kGy(Si) (20 Mrad(Si)) from a Co60 source.

Paper Details

Date Published: 15 May 2000
PDF: 11 pages
Proc. SPIE 3965, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications, (15 May 2000); doi: 10.1117/12.385432
Show Author Affiliations
Jan Bogaert, IMEC (Belgium)
Bart Dierickx, IMEC (Belgium)


Published in SPIE Proceedings Vol. 3965:
Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications
Morley M. Blouke; Nitin Sampat; Thomas Yeh; Nitin Sampat; George M. Williams; Thomas Yeh, Editor(s)

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