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Proceedings Paper

Combinatorial methods in sol-gel technology
Author(s): Juha T. Rantala; Terho K. Kololuoma; L. Kivimaki
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Paper Abstract

Sol-gel processing consists several variable parameters during materials synthesis and post processing steps. The sol-gel synthesis is rather sensitive for the parameters such as pH, temperature, type of catalyst, reaction time etc. However, this sensitivity can be taken as an advantage when developing and studying new materials and their properties. Furthermore, since the sol-gel technology mainly describes the fabrication of solid state materials from a liquid phase by applying metal alkoxides or metal salts as precursors, the post processing such as sintering has critical effects on the final form and properties of the solid material. Combinatorial chemistry and methods are valuable tools to estimate the effects of different variables and to build-up combinatorial libraries for the sol-gel technique. This paper generally describes potentials and the usage motivation of combinatorial chemistry in the sol-gel technology by taking into account some major steps in the synthesis and processing which are valuable for the estimation of the final product properties. Different kind of post processing steps in the combinatorial manner are studied in details. As an example the post processing of sol-gel derived semiconductor oxides and photosensitivity of hybrid sol-gel glasses are presented. The combinatorial treatment and measurement methods for these materials are explained.

Paper Details

Date Published: 17 May 2000
PDF: 8 pages
Proc. SPIE 3941, Combinatorial and Composition Spread Techniques in Materials and Device Development, (17 May 2000); doi: 10.1117/12.385420
Show Author Affiliations
Juha T. Rantala, VTT Electronics/Infotech Oulu (Finland)
Terho K. Kololuoma, VTT Electronics/Infotech Oulu (Finland)
L. Kivimaki, VTT Electronics/Infotech Oulu (Finland)


Published in SPIE Proceedings Vol. 3941:
Combinatorial and Composition Spread Techniques in Materials and Device Development
Ghassan E. Jabbour, Editor(s)

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