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Proceedings Paper

In-situ atomic absorption monitoring with substrate reflection
Author(s): Scott P. Hays; Robert K. Hickernell; Kristine A. Bertness
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Paper Abstract

We demonstrate a technique to apply real-time optical flux monitoring by in situ atomic absorption when the only available optical path through a molecular beam epitaxial growth chamber reflects from the substrate. Thin-film interference effects in the reflected signal were virtually eliminated during growth by using a collinear beam that has a wavelength very close to that of the group-III absorption line. This method enables atomic absorption monitoring to be applied to heterostructure growths without the need for real- time reflectance analysis. We demonstrated the technique by monitoring Ga flux during GaAs growth using a Mn lamp for the off-resonance source. The short-term uncertainty in the flux measurement was 0.6% (one standard deviation). Theoretical calculations indicated that approximately 0.2% and 0.3% maximum instantaneous error can be attained for Ga and Al, respectively, during the growth of vertical cavity surface emitting layers.

Paper Details

Date Published: 1 May 2000
PDF: 6 pages
Proc. SPIE 3946, Vertical-Cavity Surface-Emitting Lasers IV, (1 May 2000); doi: 10.1117/12.384386
Show Author Affiliations
Scott P. Hays, Univ. of Colorado/Boulder (United States)
Robert K. Hickernell, National Institute of Standards and Technology (United States)
Kristine A. Bertness, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 3946:
Vertical-Cavity Surface-Emitting Lasers IV
Kent D. Choquette; Chun Lei, Editor(s)

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