Share Email Print

Proceedings Paper

Semiconducting ferroelectric SbSI quantum dots in organically modified TiO2 matrix
Author(s): Hui Ye; Yuhuan Xu; John D. Mackenzie
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Semiconducting ferro electric antimony sulphoiodide (SbSI) microcrystallite doped organically modified TiO2 thin film and bulk solids are successfully fabricated by the sol- gel process. Ferro electric SbSI crystallites have some attractive properties, including high dielectric permittivity, high electro-optical coefficient and high photoconductivity. SbSI is also an intrinsic semiconductor with a relatively narrow energy gap. If the crystal size is near its Bohr radius and the microcrystallites are dispersed in a suitable matrix, a dramatic improvement of the third order non linearity will be achieved due to the quantum confinement effect. It is clear that the SbSI quantum dot composites are good candidates for electro-optical devices. Glycidoxypropyltrimetroxysilane modified TiO2 is used as the matrix and SbSI is synthesized in situ by using SbI3 SC9NH2)2 and H2S gas. The size is controlled by the heat-treatment conditions and is characterized by the XRD and HRTEM measurements. The optical absorption spectrum gives evidence of the quantum confinement effect. The third order susceptibility of the SbSI quantum dot is measured by the degenerate four wave mixing method.

Paper Details

Date Published: 2 May 2000
PDF: 7 pages
Proc. SPIE 3943, Sol-Gel Optics V, (2 May 2000); doi: 10.1117/12.384326
Show Author Affiliations
Hui Ye, Univ. of California/Los Angeles (United States)
Yuhuan Xu, Univ. of California/Los Angeles (United States)
John D. Mackenzie, Univ. of California/Los Angeles (United States)

Published in SPIE Proceedings Vol. 3943:
Sol-Gel Optics V
Bruce S. Dunn; Edward J. A. Pope; Helmut K. Schmidt; Masayuki Yamane, Editor(s)

© SPIE. Terms of Use
Back to Top