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Proceedings Paper

InP-based monolithic integration of 1.55-μm MQW laser diode and HBT driver circuit
Author(s): Xian-Jie Li; Fang-Hai Zhao; Qing-Ming Zeng; Yi Dong; Xu-hui Li; Shuren Yang; Ke-Li Cai; Benzhong Wang; Jin-Ping Ao; Chun-Guang Liang; Shiyong Liu
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Paper Abstract

An improved fabrication process and related experiment results of an InP-based monolithic integrated transmitter OEIC with a 1.55 micrometers MQW laser diode (LD) and an InP/InGaAs heterojunction bipolar transistors (HBT) driver circuit are presented. The epitaxial structure of the laser and driver circuits were continuously grown on semi- insulating Fe-doped InP substrate by a metal-organic chemical vapor deposition system using a vertically integration. HCL, H3PO4/H2O2 and HBr/HNO3 solution system were involved as selective or nonelective wet chemical etching respectively for the epitaxies of InP, InGaAs and InGaPAs. Both a nearly-standard contact photolithography depending on a two-step exposure technique and an electrical connection related to smoothly wet chemical etching profile of InP and InGaP in the crystal direction of (01-1) were developed in the process. The laser diode with a 3-um-wide ridge waveguide forming by a double- groove process self-aligned to the metal contact of P-type region showed an average threshold current as low as about 10mA. The HBT with a 120-nm-thick base layer performed a DC current gain of about 60-70 and an emitter-collector breakdown voltage of up to 4-5V. A clear eye diagram of the monolithic transmitter under a pulsed operation with 622Mbit/s bitrate nonreturn-to-zero pseudorandom code was obtained.

Paper Details

Date Published: 21 April 2000
PDF: 8 pages
Proc. SPIE 3949, WDM and Photonic Switching Devices for Network Applications, (21 April 2000); doi: 10.1117/12.382891
Show Author Affiliations
Xian-Jie Li, Hebei Semiconductor Research Institute and Jilin Univ. (China)
Fang-Hai Zhao, Jilin Univ. (China)
Qing-Ming Zeng, Hebei Semiconductor Research Institute (China)
Yi Dong, Hebei Semiconductor Research Institute (China)
Xu-hui Li, Hebei Semiconductor Research Institute (China)
Shuren Yang, Jilin Univ. (China)
Ke-Li Cai, Hebei Semiconductor Research Institute (China)
Benzhong Wang, Jilin Univ. (Singapore)
Jin-Ping Ao, Hebei Semiconductor Research Institute and Jilin Univ. (China)
Chun-Guang Liang, Hebei Semiconductor Research Institute (China)
Shiyong Liu, Jilin Univ. (China)


Published in SPIE Proceedings Vol. 3949:
WDM and Photonic Switching Devices for Network Applications
Ray T. Chen; George F. Lipscomb, Editor(s)

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