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Proceedings Paper

Room-temperature electroluminescence from erbium-doped porous silicon composites for infrared LED applications
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Paper Abstract

The nanostructured matrix of porous silicon makes the material an ideal host for erbium because its very large surface area allows easy infiltration of the ions into the matrix and it readily oxidizes obtaining large concentrations of oxygen necessary for erbium emission. Erbium is infiltrated in the pores (<EQ 10-19 cm-3) by cathodic electrochemical migration of the ions followed by high temperature annealing (950 - 1100 degree(s)C). Electrochemical doping of porous silicon by erbium is simpler and of lower cost when compared to conventional techniques like ion implantation, epitaxial growth, and chemical vapor deposition used to fabricate erbium-doped c-Si structures. We demonstrate stable room- temperature electroluminescence at 1.54 micrometers from erbium- doped porous silicon devices under both forward and reverse bias conditions.

Paper Details

Date Published: 13 April 2000
PDF: 10 pages
Proc. SPIE 3942, Rare-Earth-Doped Materials and Devices IV, (13 April 2000); doi: 10.1117/12.382845
Show Author Affiliations
Herman A. Lopez, Univ. of Rochester (United States)
Philippe M. Fauchet, Univ. of Rochester (United States)

Published in SPIE Proceedings Vol. 3942:
Rare-Earth-Doped Materials and Devices IV
Shibin Jiang, Editor(s)

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