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Proceedings Paper

Design and performance of nitride-based UV LEDs
Author(s): Mary Hagerott Crawford; Jung Han; Weng W. Chow; Michael A. Banas; Jeffrey J. Figiel; Lei Zhang; Randy J. Shul
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Paper Abstract

In this paper, we overview several of the critical materials growth, design and performance issues for nitride-based UV (less than 400 nm) LEDs. The critical issue of optical efficiency is presented through temperature-dependent photoluminescence studies of various UV active regions. These studies demonstrate enhanced optical efficiencies for active regions with In-containing alloys (InGaN, AlInGaN). We discuss the trade-off between the challenging growth of high Al containing alloys (AlGaN, AlGaInN), and the need for sufficient carrier confinement in UV heterostructures. Carrier leakage for various composition AlGaN barriers is examined through a calculation of the total unconfined carrier density in the quantum well system. We compare the performance of two distinct UV LED structures: GaN/AlGaN quantum well LEDs for (lambda) less than 360 nm emission, and InGaN/AlGaInN quantum well LEDs for 370 nm less than (lambda) less than 390 nm emission.

Paper Details

Date Published: 17 April 2000
PDF: 11 pages
Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); doi: 10.1117/12.382842
Show Author Affiliations
Mary Hagerott Crawford, Sandia National Labs. (United States)
Jung Han, Sandia National Labs. (United States)
Weng W. Chow, Sandia National Labs. (United States)
Michael A. Banas, Sandia National Labs. (United States)
Jeffrey J. Figiel, Sandia National Labs. (United States)
Lei Zhang, Sandia National Labs. (United States)
Randy J. Shul, Sandia National Labs. (United States)

Published in SPIE Proceedings Vol. 3938:
Light-Emitting Diodes: Research, Manufacturing, and Applications IV
H. Walter Yao; Ian T. Ferguson; E. Fred Schubert, Editor(s)

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