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Proceedings Paper

Long-wavelength shift of ZnSSe metal-semiconductor-metal light-emitting diodes with high injection currents
Author(s): Yan-Kuin Su; Wen Ray Chen; Shoou-Jinn Chang; Fuh-Shyang Juang; W. H. Lan; Alpha C.H. Lin; Horng Chang
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Paper Abstract

The reliable n+-ZnSSe metal-semiconductor-metal (MSM) blue-green light emitting diodes (LEDs) have been fabricated. The contact metal was CuGe/Pt/Au. The current transport mechanism agree very well with the back-to-back tunneling diodes. The kink phenomena were observed in the MSM current- voltage curves. In the metal-semiconductor interface, the element Zn in ZnSSe can be replaced by Cu results in some acceptor levels as radiative recombination centers in the MS interface. The peak wavelength in the LED electroluminescent (EL) spectra was strongly dependent on the injection currents from 5 to 40 mA. The peak wavelength and full width at half maximum are 510 and 10 nm, respectively, at 10 mA injection current. When the injection current increases to 15 mA, the peak wavelength shifted to 530 nm due to different recombination centers. Further increasing the injection currents, the peak wavelength shifted slightly to the long wavelength side.

Paper Details

Date Published: 17 April 2000
PDF: 11 pages
Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); doi: 10.1117/12.382832
Show Author Affiliations
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
Wen Ray Chen, National Cheng Kung Univ. (Taiwan)
Shoou-Jinn Chang, National Cheng Kung Univ. (Taiwan)
Fuh-Shyang Juang, National Huwei Institute of Technology (Taiwan)
W. H. Lan, Chung Shan Institute of Science and Technology (Taiwan)
Alpha C.H. Lin, Chung Shan Institute of Science and Technology (Taiwan)
Horng Chang, Chung Shan Institute of Science and Technology (Taiwan)


Published in SPIE Proceedings Vol. 3938:
Light-Emitting Diodes: Research, Manufacturing, and Applications IV
H. Walter Yao; Ian T. Ferguson; E. Fred Schubert, Editor(s)

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