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Proceedings Paper

Native oxided AlAs current blocking layer for AlGaInP high-brightness light-emitting diodes
Author(s): Guohong Wang; Xiaoyu Ma; Yufang Zhang; Shutang Wang; Yuzhang Li; Lianhui Chen
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Paper Abstract

Native Oxide AlAs layer were employed to block the current injection from the top anode. The luminous intensity exceeded 75 mcd of the LED chip with native oxide. AlAs layer sandwiched 5 micrometer AlGaAs current spreading layer under 20 mA current injection. Electrical and optical properties the LED chip and plastically sealed lamp were measured. Aging of the LED chip and lamp were performed under 70 degree Celsius and room temperature. Experiment results shown that there is no apparent effect of the native oxided AlAs layer and the process on the reliability of the LED devices.

Paper Details

Date Published: 17 April 2000
PDF: 4 pages
Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); doi: 10.1117/12.382826
Show Author Affiliations
Guohong Wang, Institute of Semiconductors (China)
Xiaoyu Ma, Institute of Semiconductors (China)
Yufang Zhang, Institute of Semiconductors (China)
Shutang Wang, Institute of Semiconductors (China)
Yuzhang Li, Institute of Semiconductors (China)
Lianhui Chen, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 3938:
Light-Emitting Diodes: Research, Manufacturing, and Applications IV
H. Walter Yao; Ian T. Ferguson; E. Fred Schubert, Editor(s)

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