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Proceedings Paper

Improved-efficiency positive and negative luminescent light-emitting devices for mid-infrared gas-sensing applications
Author(s): Mark J. Pullin; Xiaobing Li; Joerg Heber; David Gervaux; Christopher C. Phillips
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Paper Abstract

InAs/InAsSb SQW LED's incorporating AlAs0.02Sb0.98 or In0.83Al0.17As electron confining barrier layers are reported. Devices emitting 108 (mu) W and 84 (mu) W at 300 K with QW emission at (lambda) equals 4.1 micrometer and (lambda) equals 4.7 micrometer exhibit quantum efficiencies that are improved by factors of 7 and 3.4 respectively over control samples without the barrier. The operating wavelength of negative luminescent (NL) devices with InAs/In(As,Sb) strained-layer-superlattice (SLS) active regions has been extended to (lambda) equals 6.8 micrometer. NL performance is limited by leakage currents that originate in the n+ contact layer.

Paper Details

Date Published: 17 April 2000
PDF: 10 pages
Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); doi: 10.1117/12.382825
Show Author Affiliations
Mark J. Pullin, Imperial College of Science, Technology, and Medicine (United Kingdom)
Xiaobing Li, Imperial College of Science, Technology, and Medicine (United Kingdom)
Joerg Heber, Imperial College of Science, Technology, and Medicine (United Kingdom)
David Gervaux, Imperial College of Science, Technology, and Medicine (United Kingdom)
Christopher C. Phillips, Imperial College of Science, Technology, and Medicine (United Kingdom)


Published in SPIE Proceedings Vol. 3938:
Light-Emitting Diodes: Research, Manufacturing, and Applications IV
H. Walter Yao; Ian T. Ferguson; E. Fred Schubert, Editor(s)

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