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Proceedings Paper

Exciton localization and the Stokes' shift in undoped InGaN/GaN multiquantum wells
Author(s): Yang Fang Chen; Tai Yuan Lin; Hong-Chang Yang
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Paper Abstract

Optical properties of undoped InGaN/GaN multiquantum wells (MQWs) have been investigated by photoconductivity, photoluminescence, and photoluminescence excitation measurements. We report the first observation of persistent photoconductivity (PPC) in InGaN/GaN MQWs and show that the PPC effect arises from In composition fluctuations in the InGaN well layer. From the analysis of the decay kinetics, the localization depth caused by composition fluctuations has been determined. Compared with the results of complementary absorption and photoluminescence measurements, it is found that the quantum-confined Stark effect due to piezoelectric field and composition fluctuations both exist in the InGaN/GaN MQWs. These two effects are responsible for the photoluminescence Stokes' shift in the InGaN well layers. Here, we provide an unique way to distinguish the individual contribution to the Stokes' shift for the piezoelectric field and composition fluctuations.

Paper Details

Date Published: 17 April 2000
PDF: 6 pages
Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); doi: 10.1117/12.382824
Show Author Affiliations
Yang Fang Chen, National Taiwan Univ. (Taiwan)
Tai Yuan Lin, National Taiwan Univ. (Taiwan)
Hong-Chang Yang, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 3938:
Light-Emitting Diodes: Research, Manufacturing, and Applications IV
H. Walter Yao; Ian T. Ferguson; E. Fred Schubert, Editor(s)

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