Share Email Print
cover

Proceedings Paper

Optical properties of AlN/sapphire grown at high and low temperatures studied by variable angle spectroscopic ellipsometry and micro Raman scattering
Author(s): Chunhui Yan; H. Walter Yao; Amber C. Abare; Steven P. DenBaars; Jody J. Klaassen; M. F. Rosamond; Peter P. Chow; John M. Zavada
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Variable angle spectroscopic ellipsometry (VASE) and micro Raman scattering have been employed to study the optical anisotropy and optical constants of AlN films grown at high and low temperature (HT and LT). The AlN films were grown by metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) on c-plane sapphire ((alpha) -Al2O3) substrates, respectively. Anisotropic optical phonon spectra of AlN have been measured along two directions so that the optical axis <c> of AlN is either perpendicular or parallel to the polarization of the incident beam. Nonzero off-diagonal elements Aps and Asp of Jones matrix in the reflection VASE (RVASE) measurements indicate that the <c> of AlN is slightly away from surface normal due to substrate miscut. The ordinary optical constants of both HT AlN have been determined spectroscopic ellipsometry at small angles of incidence so that the extraordinary response is greatly reduced. The film thickness along with the surface overlayer was determined via the VASE data analysis as well.

Paper Details

Date Published: 17 April 2000
PDF: 11 pages
Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); doi: 10.1117/12.382820
Show Author Affiliations
Chunhui Yan, Univ. of Nebraska/Lincoln (United States)
H. Walter Yao, Univ. of Nebraska/Lincoln (United States)
Amber C. Abare, Univ. of California/Santa Barbara (United States)
Steven P. DenBaars, Univ. of California/Santa Barbara (United States)
Jody J. Klaassen, SVT Associates, Inc. (United States)
M. F. Rosamond, SVT Associates, Inc. (United States)
Peter P. Chow, SVT Associates, Inc. (United States)
John M. Zavada, U.S. Army European Research Office (United States)


Published in SPIE Proceedings Vol. 3938:
Light-Emitting Diodes: Research, Manufacturing, and Applications IV
H. Walter Yao; Ian T. Ferguson; E. Fred Schubert, Editor(s)

© SPIE. Terms of Use
Back to Top