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Proceedings Paper

Resonant-cavity LEDs at 655- and 880-nm wavelengths
Author(s): Pekko Sipilae; Mika J. Saarinen; Ville Vilokkinen; Seppo Orsila; Petri Melanen; Pekka Savolainen; Mika Toivonen; Mihail M. Dumitrescu; Markus Pessa
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Paper Abstract

Monolithic top-emitting resonant cavity light-emitting diodes (RCLEDs) have been fabricated by solid-source MBE. The RCLEDs in the 650-nm range, with modulation bandwidths exceeding 180 MHz, are possible low-cost transmitter candidates for systems using plastic optical fibers (POFs), such as IEEE-1394 at 100 Mb/s and 200 Mb/s and ATM at 155 Mb/s. Modulation bandwidth of greater than 120 MHz and light power of 2 mW (cw) have been achieved for (phi )84-micrometer devices driven at a 40 mA current. Accelerated aging tests for 27,500 device-hours indicate no degradation in output power. A variation in device temperature significantly modifies the far-field pattern and thus the fiber coupling efficiency, due to a cavity detuning effect. The effects of detuning and the temperature and bias dependencies of the devices are investigated. The 880-nm RCLEDs have a maximum output power of 25 mW. Applications include open-air optical communication systems, collision avoidance and measurement systems.

Paper Details

Date Published: 17 April 2000
PDF: 8 pages
Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); doi: 10.1117/12.382816
Show Author Affiliations
Pekko Sipilae, Tampere Univ. of Technology (Finland)
Mika J. Saarinen, Tampere Univ. of Technology (Finland)
Ville Vilokkinen, Tampere Univ. of Technology (Finland)
Seppo Orsila, Tampere Univ. of Technology (Finland)
Petri Melanen, Tampere Univ. of Technology (Finland)
Pekka Savolainen, Tampere Univ. of Technology (Finland)
Mika Toivonen, Tampere Univ. of Technology (Finland)
Mihail M. Dumitrescu, Tampere Univ. of Technology (Finland)
Markus Pessa, Tampere Univ. of Technology (Finland)

Published in SPIE Proceedings Vol. 3938:
Light-Emitting Diodes: Research, Manufacturing, and Applications IV
H. Walter Yao; Ian T. Ferguson; E. Fred Schubert, Editor(s)

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