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Proceedings Paper

Laser characterization of the Yb3+:Y2SiO5 (Yb:YOS)
Author(s): Romain Gaume; Paul-Henri Haumesser; Gerard Aka; Bruno Viana; D. Vivien; Bernard Ferrand
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Paper Abstract

The spectroscopic properties of Yb3+:Y2SiO5 (Yb:YOS) and its laser potential for 1 micrometers emission are investigated. Crystals containing 5% of Yb3+ ions (9.2 X 1020 ions/cm3) with very good optical quality have been grown by the Czochralski process. An energy-level diagram for Yb3+ in this host is proposed, taking into account electron-phonon coupling phenomena. A broad emission, from 0.98 micrometers to 1.1 micrometers , with a lifetime of 1.5 ms have been measured and the laser parameters indicate that this host could be well adapted for high power lasers. In good agreement with the spectroscopic predictions, laser oscillation under Ti:sapphire laser pumping was observed for the first time, on uncoated crystals in a plano-concave cavity. A slope efficiency of 44% and a laser threshold around 160 mW have been obtained. This laser material appears very attractive for the development of new Yb3+ sources.

Paper Details

Date Published: 14 April 2000
PDF: 8 pages
Proc. SPIE 3929, Solid State Lasers IX, (14 April 2000); doi: 10.1117/12.382787
Show Author Affiliations
Romain Gaume, Ecole Nationale Superieure de Chimie de Paris (France)
Paul-Henri Haumesser, Ecole Nationale Superieure de Chimie de Paris (France)
Gerard Aka, Ecole Nationale Superieure de Chimie de Paris (France)
Bruno Viana, Ecole Nationale Superieure de Chimie de Paris (France)
D. Vivien, Ecole Nationale Superieure de Chimie de Paris (France)
Bernard Ferrand, CEA-LETI (France)


Published in SPIE Proceedings Vol. 3929:
Solid State Lasers IX
Richard Scheps, Editor(s)

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