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Proceedings Paper

Design of efficient high-power diode-end-pumped TEMoo Nd:YVO4 laser
Author(s): Yu-Fen Chen; C. C. Liao; Y. P. Lan; S. C. Wang
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Paper Abstract

A systematic investigation on a series of Nd:YVO4 crystals with different dopant concentration is conducted to scale the diode-end-pumped laser performance to higher powers. The analysis reveals that lowering the dopant concentration linearly extends the fracture-limited pump power and the thermal shock parameter plays an important role in the estimation of the fracture-limited pump power. The thermal shock parameter in Nd:YVO4 crystals has been determined from the laser experiments. Based on the analysis, we demonstrate a compact and efficient diode-end- pumped TEMoo laser with output power of 25.2-W for 52-W of incident pump power by use of a single YVO4 crystal with a Nd concentration of 0.3 at.%. In Q-switched operation 21-W of average power at a pulse repetition rate of 100 kHz and approximately 1.1-m pulse energy at a pulse repetition rate of 10 Hz were produced.

Paper Details

Date Published: 14 April 2000
PDF: 6 pages
Proc. SPIE 3929, Solid State Lasers IX, (14 April 2000); doi: 10.1117/12.382755
Show Author Affiliations
Yu-Fen Chen, National Chiao Tung Univ. (Taiwan)
C. C. Liao, National Chiao Tung Univ. (Taiwan)
Y. P. Lan, National Chiao Tung Univ. (Taiwan)
S. C. Wang, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 3929:
Solid State Lasers IX
Richard Scheps, Editor(s)

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