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Proceedings Paper

Surface investigation of porous GaAs used for luminescent films
Author(s): Valentinas J. Snitka; I. Simkiene; K. Grigoras; Vytautas Jasutis; Kestutis Naudzius; Vaidas Pacebutas; J. Sabataityte; Vida Mizariene
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Paper Abstract

The investigations of photo luminescence spectra of the electrochemically produced porous GaAs layers, excited by continuous Ar laser radiation, were carried out. The chemical composition of the anodized p- and n-GaAs was analyzed by x-ray photoelectron spectroscopy. The GaAs surface morphology was examined by high-resolution transmission-electron microscopy and surface structure was investigated by electronograph EMR100 and Atomic Force Microscopy. It is established that increasing a duration and current density of etching changes the porosity of bulk GaAs and both Galium and arsenic oxides are formed on the sample surface Photo luminescence spectra of investigated porous surface consist of 'IR' and 'green' spectral structures. The 'IR' structure exhibits redshifts of its peak energies, and 'green' structure intensity is dependent on etching conditions. A possible reason of origin and changes in those spectra is discussed.

Paper Details

Date Published: 10 April 2000
PDF: 5 pages
Proc. SPIE 4019, Design, Test, Integration, and Packaging of MEMS/MOEMS, (10 April 2000); doi: 10.1117/12.382323
Show Author Affiliations
Valentinas J. Snitka, Kaunas Univ. of Technology (Lithuania)
I. Simkiene, Semiconductor Physics Institute (Lithuania)
K. Grigoras, Semiconductor Physics Institute (Lithuania)
Vytautas Jasutis, Semiconductor Physics Institute (Lithuania)
Kestutis Naudzius, Semiconductor Physics Institute (Lithuania)
Vaidas Pacebutas, Semiconductor Physics Institute (Lithuania)
J. Sabataityte, Semiconductor Physics Institute (Lithuania)
Vida Mizariene, Kaunas Univ. of Technology (Lithuania)


Published in SPIE Proceedings Vol. 4019:
Design, Test, Integration, and Packaging of MEMS/MOEMS
Bernard Courtois; Selden B. Crary; Kaigham J. Gabriel; Jean Michel Karam; Karen W. Markus; Andrew A. O. Tay, Editor(s)

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