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Proceedings Paper

Test structures for CMOS-compatible silicon pressure sensor reliability characterization
Author(s): Enric Montane; Sebastian A. Bota; Santiago Marco; M. Carmona; Josep Samitier
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Paper Abstract

Pressure sensors structures have been fabricated in a commercial CMOS foundry technology using a post-processing for back-side wafer micro machining. In order to predict the sensor response to an externally applied differential pressure, the structure behavior has been simulated by Finite Element Methods. The design and fabrication of test structures for these sensor devices is described. Experimental results obtained using these structures are presented.

Paper Details

Date Published: 10 April 2000
PDF: 7 pages
Proc. SPIE 4019, Design, Test, Integration, and Packaging of MEMS/MOEMS, (10 April 2000); doi: 10.1117/12.382301
Show Author Affiliations
Enric Montane, Univ. de Barcelona (Spain)
Sebastian A. Bota, Univ. de Barcelona (Spain)
Santiago Marco, Univ. de Barcelona (Spain)
M. Carmona, Univ. de Barcelona (Spain)
Josep Samitier, Univ. de Barcelona (Spain)

Published in SPIE Proceedings Vol. 4019:
Design, Test, Integration, and Packaging of MEMS/MOEMS
Bernard Courtois; Selden B. Crary; Kaigham J. Gabriel; Jean Michel Karam; Karen W. Markus; Andrew A. O. Tay, Editor(s)

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