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Proceedings Paper

Modeling, design, and test of a monolithic integrated magnetic sensor in a digital CMOS technology using a switched current interface system
Author(s): C. Rubio; Sebastian A. Bota; J. G. Macias; Josep Samitier
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Paper Abstract

A magnetic field-to-voltage converter using a magnetic MOSFET devices has been designed, simulated and tested. The resulting sensor was measured under magnetic fields ranging from 0 to 0.8T, the obtained sensitivity was 0.03T-1 with an offset lower than 0.2 percent. SPICE macro model for the MAGFET in the saturation region is presented. Also, we have simulated the behavior of the specific A/D system, based on a current-mode technique, making use of high description language.

Paper Details

Date Published: 10 April 2000
PDF: 10 pages
Proc. SPIE 4019, Design, Test, Integration, and Packaging of MEMS/MOEMS, (10 April 2000); doi: 10.1117/12.382283
Show Author Affiliations
C. Rubio, Univ. de Barcelona (Spain)
Sebastian A. Bota, Univ. de Barcelona (Spain)
J. G. Macias, Univ. de Barcelona (Spain)
Josep Samitier, Univ. de Barcelona (Spain)

Published in SPIE Proceedings Vol. 4019:
Design, Test, Integration, and Packaging of MEMS/MOEMS
Bernard Courtois; Selden B. Crary; Kaigham J. Gabriel; Jean Michel Karam; Karen W. Markus; Andrew A. O. Tay, Editor(s)

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