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Proceedings Paper

Design and fabrication of traveling wave electroabsorption modulator
Author(s): Guoliang Li; Dong-Soo Shin; William S. C. Chang; Peter M. Asbeck; Paul K. L. Yu; Chen Kuo Sun; Stephen A. Pappert; Richard Nguyen
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Paper Abstract

Semiconductor electroabsorption modulator (EAM) is a promising alternative to lithium niobate modulator for digital and analog fiber optic links due to its inherent small size, high modulation efficiency, and potential of monolithic integration with other electronic and optoelectronic components. For high-speed application, the bandwidth of the lumped element EAM is known to be RC-time limited. To achieve an ultra large bandwidth in lumped element EAM, the modulation efficiency has to be greatly sacrificed. This is especially critical in analog operation where RF link loss and noise figure must be minimized. To overcome the RC bandwidth limit and to avoid significantly compromising the modulation efficiency, the traveling wave electroabsorption modulator has been proposed and experimentally investigated by several authors.

Paper Details

Date Published: 19 April 2000
PDF: 4 pages
Proc. SPIE 3950, Optoelectronic Integrated Circuits IV, (19 April 2000); doi: 10.1117/12.382169
Show Author Affiliations
Guoliang Li, Univ. of California/San Diego (United States)
Dong-Soo Shin, Univ. of California/San Diego (United States)
William S. C. Chang, Univ. of California/San Diego (United States)
Peter M. Asbeck, Univ. of California/San Diego (United States)
Paul K. L. Yu, Univ. of California/San Diego (United States)
Chen Kuo Sun, Space and Naval Warfare Systems Ctr. (United States)
Stephen A. Pappert, Space and Naval Warfare Systems Ctr. (United States)
Richard Nguyen, Space and Naval Warfare Systems Ctr. (United States)


Published in SPIE Proceedings Vol. 3950:
Optoelectronic Integrated Circuits IV
Yoon-Soo Park; Ray T. Chen, Editor(s)

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