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Proceedings Paper

Multiply interconnected GaAs/AlGaAs quantum-well p-i-n-i-p-type diodes for high-performance all-optical bistable and oscillation device applications
Author(s): El-Hang Lee
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Paper Abstract

This paper is to report in a collective review of our recent work that multiply interconnected GaAs/AlGaAs multiple shallow quantum wells p-i-n-i-p type diodes that we designed and fabricated have been useful in realizing novel devices such as non-biased all-optical bistable devices and all- optical oscillators. A pair of two oppositely polarized p-i- n type diode and n-i-p type diode were monolithically integrated, in which the two intrinsic regions were made of extremely shallow quantum well layers. These layers provide large electric field swing and strong light absorption even without any externally applied bias. We observed bistable contrast ratios of 2:1 and an oscillation frequency reaching several MHz. Non-biased scheme can allow high packing density and simple layout due to electrically independent nature of the devices.

Paper Details

Date Published: 19 April 2000
PDF: 8 pages
Proc. SPIE 3950, Optoelectronic Integrated Circuits IV, (19 April 2000); doi: 10.1117/12.382166
Show Author Affiliations
El-Hang Lee, Inha Univ. (South Korea)


Published in SPIE Proceedings Vol. 3950:
Optoelectronic Integrated Circuits IV
Yoon-Soo Park; Ray T. Chen, Editor(s)

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