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Proceedings Paper

Time-domain correlation image sensor: CMOS design and integration of demodulator pixels
Author(s): Akira Kimachi; Shigeru Ando
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Paper Abstract

We describe CMOS pixel design and fabrication results of the time-domain correlation image sensor, which has been proposed and studied in our laboratory. This sensor can essentially be regarded as an array of demodulators--it computes temporal correlation between incident light intensity and a global reference signal every frame. The correlation detection allows sensitivity to high frequency illumination, and makes various applications possible by using this sensor together with active sensing methods such as modulated illumination and camera motion. The prototype pixel, based on a transconductance multiplier with a photodiode current source and a pair of capacitive loads, is designed as a MOS pair with its common source and drains extended to form a photodiode and capacitors, respectively. Based on this design, 64 times 64-pixel sensors were fabricated with a 1.2-micron CMOS process. Experiments under sinusoidally modulated illumination confirmed temporal correlation performance of the fabricated sensors. Application examples such as lock-in photometry and vibrometry are also presented.

Paper Details

Date Published: 19 April 2000
PDF: 8 pages
Proc. SPIE 3950, Optoelectronic Integrated Circuits IV, (19 April 2000); doi: 10.1117/12.382165
Show Author Affiliations
Akira Kimachi, Univ. of Tokyo (Japan)
Shigeru Ando, Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 3950:
Optoelectronic Integrated Circuits IV
Yoon-Soo Park; Ray T. Chen, Editor(s)

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