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Proceedings Paper

Mid-IR InAsSb photovoltaic detectors
Author(s): Anna Rakovska; Vincent Berger; Xavier Marcadet; Genevieve Glastre; Borge Vinter; K. Bouzehouane; Daniel Kaplan; T. Oksehendler
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Paper Abstract

We describe a mid-IR photovoltaic detector using InAsSb as active material, grown by MBE on a GaSb substrate. The purpose of this study is to show that quantum detectors can offer an alternative to thermal detectors for high temperature operation. With a 9 percent Sb content, InAsSb is lattice matched to GaSb and thus provides an excellent material quality, with Shokley-Read lifetimes of the order of 200 ns as measured by photoconductive gain measurements as well as time resolved photoconductivity experiments. The band gap of InAsSb corresponds to a wavelengths as well as time resolved photoconductivity experiments. The band gap of InAsSb corresponds to a wavelength of 5 microns at room temperature. This makes InAsSb an ideal candidate for rom temperature detection in the 3-5 microns atmospheric window. Photovoltaic structures are characterized by current voltage characteristics as a function of temperature. Using the absorption value obtained on the test samples, a detectivity of 7 by 109 Jones can be obtained at a temperature of 250 K, which can easily be reached with Peltier cooling. This leads to a NETD lower than 80 mK.

Paper Details

Date Published: 13 April 2000
PDF: 8 pages
Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382144
Show Author Affiliations
Anna Rakovska, Thomson-CSF (France)
Vincent Berger, Thomson-CSF (France)
Xavier Marcadet, Thomson-CSF (France)
Genevieve Glastre, Thomson-CSF (France)
Borge Vinter, Thomson-CSF (France)
K. Bouzehouane, Ecole Polytechnique (France)
Daniel Kaplan, Ecole Polytechnique (France)
T. Oksehendler, Ecole Polytechnique (France)


Published in SPIE Proceedings Vol. 3948:
Photodetectors: Materials and Devices V
Gail J. Brown; Manijeh Razeghi, Editor(s)

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