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Proceedings Paper

LEO of III-nitride on Al2O3 and Si substrates
Author(s): Manijeh Razeghi; Patrick Kung; Peter M. Sandvik; Kan Mi; Xiaolong Zhang; Vinayak P. Dravid; Jaime A. Freitas Jr.; Adam W. Saxler
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Paper Abstract

Lateral epitaxial overgrowth (LEO) has recently become the method of choice to reduce the density of dislocations in heteroepitaxial GaN thin films, and is thus expected to lead to enhanced performance devices. We present here the LEO growth and characterization of GaN films by low pressure metalorganic chemical vapor deposition. Various substrates were used, including basal plane sapphire and oriented Si substrates. The steps in the LEO growth technology will be briefly reviewed. The characterization results will be discussed in detail. The structural, electrical and optical properties of the films were assessed through scanning, atomic and transmission electron microscopy, x-ray diffraction, capacitance-voltage, deep level transient spectroscopy, photoluminescence, and scanning cathodoluminenscence measurements. Single-step and double- step LEO GaN was achieved on sapphire. Similarly high quality LEO grown GaN films were obtained on sapphire and silicon substrates. Clear and dramatic reduction in the density of defects are observed in LEO grown materials using the various characterization techniques mentioned previously.

Paper Details

Date Published: 13 April 2000
PDF: 10 pages
Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382133
Show Author Affiliations
Manijeh Razeghi, Northwestern Univ. (United States)
Patrick Kung, Northwestern Univ. (United States)
Peter M. Sandvik, Northwestern Univ. (United States)
Kan Mi, Northwestern Univ. (United States)
Xiaolong Zhang, Northwestern Univ. (United States)
Vinayak P. Dravid, Northwestern Univ. (United States)
Jaime A. Freitas Jr., Naval Research Lab. (United States)
Adam W. Saxler, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 3948:
Photodetectors: Materials and Devices V
Gail J. Brown; Manijeh Razeghi, Editor(s)

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