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Proceedings Paper

High quantum efficiency AlxGa1-xN/GaN-based ultraviolet p-i-n photodetectors with a recessed window structure
Author(s): Ting Li; Shuling Wang; Ariane L. Beck; Charles J. Collins; Bo Yang; Russell D. Dupuis; John C. Carrano; Matthew J. Schurman; Ian T. Ferguson; Joe C. Campbell
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Paper Abstract

We report on the improved quantum efficiency of both GaN homojunction and AlxGa1-xN/GaN heterojunction photodiodes using a recessed window device structure. A very high quantum efficiency of 77 percent at 357 nm and also a much improved quantum efficiency at the solar blind wavelengths were achieved. A spatial non-uniformity problem on the large area devices was observed with 2D raster scan photocurrent measurements. The spatial non-uniformity is attributed to an electric field crowding effect that is primarily caused by the high resistivity of the p-GaN layer with the aid of Medici simulations.

Paper Details

Date Published: 13 April 2000
PDF: 7 pages
Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382131
Show Author Affiliations
Ting Li, Univ. of Texas/Austin (United States)
Shuling Wang, Univ. of Texas/Austin (United States)
Ariane L. Beck, Univ. of Texas/Austin (United States)
Charles J. Collins, Univ. of Texas/Austin (United States)
Bo Yang, Univ. of Texas/Austin (United States)
Russell D. Dupuis, Univ. of Texas/Austin (United States)
John C. Carrano, West Point Military Academy (United States)
Matthew J. Schurman, EMCORE Corp. (United States)
Ian T. Ferguson, EMCORE Corp. (United States)
Joe C. Campbell, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 3948:
Photodetectors: Materials and Devices V
Gail J. Brown; Manijeh Razeghi, Editor(s)

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