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Proceedings Paper

Group III-nitride materials for ultraviolet detection applications
Author(s): Peter P. Chow; Jody J. Klaassen; James M. Van Hove; Andrew M. Wowchak; Christina Polley; David King
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Paper Abstract

High performance UV detectors have been fabricated using group III-nitride materials grown by molecular beam epitaxy. GaN PIN detectors exhibit near quantum efficiency limited responsivity, sharp spectral cutoff, and high shunt resistance of several hundred mega-ohms for 0.5 mm2 active area devices. Comparison of PIN and Schottky devices is presented. The capabilities of group III-nitride based UV detectors is discussed in relation to suitability in UV sensing applications such as high temperature flame sensing, UV-B solar radiation monitoring, and high intensity UV dosimetry.

Paper Details

Date Published: 13 April 2000
PDF: 9 pages
Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382130
Show Author Affiliations
Peter P. Chow, SVT Associates/Blue Lotus Micro Devices, Inc. (United States)
Jody J. Klaassen, SVT Associates/Blue Lotus Micro Devices, Inc. (United States)
James M. Van Hove, SVT Associates/Blue Lotus Micro Devices, Inc. (United States)
Andrew M. Wowchak, SVT Associates/Blue Lotus Micro Devices, Inc. (United States)
Christina Polley, SVT Associates/Blue Lotus Micro Devices, Inc. (United States)
David King, SVT Associates/Blue Lotus Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 3948:
Photodetectors: Materials and Devices V
Gail J. Brown; Manijeh Razeghi, Editor(s)

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