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Proceedings Paper

Detailed feasibility study on a flame detector using AlGaN photosensors
Author(s): Akira Hirano; C. Pernot; Motoaki Iwaya; T. Detchprohm; Hiroshi Amano; Isamu Akasaki
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Paper Abstract

Among the current flame detectors, UV selective photosensor has the highest performance thanks to its high ability to follow the turn down of burners. However, its utilization is limited to industrial-use because of its lifetime of 1-2 years, operation temperature below 120 degrees C, and its high system cost including power supply of 300V and cooling. Accordingly, solid sate flame detector is strongly desired. The required elements for the UV flame detection is as follows: a) photo current given by low intensity light should be greater than dark current; b) high rejection to the background is indispensable. AlGaN was chosen through material selection and feasibility study had been conducted. For a), using pn-GaN grown on single buffer layer, the leakage current comes from both mesa sidewall leakage and tunneling current through PN junction. Both leakages were approximately 2 orders larger to detect 1nW/cm2, but thought to be within outreach using multi-buffer crystal growth technique and sensor design. For b), AlGaN photocurrent fabricated on the multibuffer layer has shown responsivity difference of 3 orders at the bandage of 4.4 eV, which satisfied the high rejection in UV region of 300- 400nm.

Paper Details

Date Published: 13 April 2000
PDF: 11 pages
Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382129
Show Author Affiliations
Akira Hirano, Osaka Gas Co., Ltd. (Japan)
C. Pernot, Osaka Gas Co., Ltd. (Japan)
Motoaki Iwaya, Meijo Univ. (Japan)
T. Detchprohm, Meijo Univ. (Japan)
Hiroshi Amano, Meijo Univ. (Japan)
Isamu Akasaki, Mejio Univ. (Japan)

Published in SPIE Proceedings Vol. 3948:
Photodetectors: Materials and Devices V
Gail J. Brown; Manijeh Razeghi, Editor(s)

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