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Proceedings Paper

GaN homojunction and AlGaN/GaN heterojunction visible-blind photodiodes grown on SiC
Author(s): Gary E. Bulman; Hua-Shuang Kong; Michelle T. Leonard
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Paper Abstract

GaN homojunction and AlGaN/GaN heterojunction UV photodiodes were successfully fabricated and tested. The p+/n mesa devices were grown on a n-type 6H-SiC substrate. Photoresponse was observed in these deices from 206 nm to the cutoff wavelength of GaN. Peak responsivity values of 111 mA/W and 123 mA/W were observed at 360 nm for unpackaged homojunction and heterojunction devices, respectively. In packaged device, the peak responsivity increased to 124 and 147 mA/W for the homojunction and heterojunction devices, respectively. High breakdown voltages in excess of 100 V for the homojunction and 70 V for the heterojunction devices were obtained with dark current densities of 3 by 10-11 A/cm2 and 1 by 10-10 A/cm2 A/cm2 at -1V bias at room temperature, respectively. These result show that homojunction and heterojunction visible-blind detectors can be fabricated in the AlGaN/GaN material system on SiC substrates.

Paper Details

Date Published: 13 April 2000
PDF: 10 pages
Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382127
Show Author Affiliations
Gary E. Bulman, Cree Research, Inc. (United States)
Hua-Shuang Kong, Cree Research, Inc. (United States)
Michelle T. Leonard, Cree Research, Inc. (United States)


Published in SPIE Proceedings Vol. 3948:
Photodetectors: Materials and Devices V
Gail J. Brown; Manijeh Razeghi, Editor(s)

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