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Proceedings Paper

Solar-blind AlxGa1-xN p-i-n photodetectors grown on LEO and non-LEO GaN
Author(s): Peter M. Sandvik; Danielle Walker; Patrick Kung; Kan Mi; Fatemeh Shahedipour; Vipan Kumar; Xinghong Zhang; Jacqueline E. Diaz; Christopher Louis Jelen; Manijeh Razeghi
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Paper Abstract

There is currently a strong interest in developing solid- state, UV photodetectors for a variety of applications. Some of these are early missile threat warning, covet space to space communications, flame monitoring, UV radiation monitoring and chemical/biological reagent detection. The III-Nitride material system is an excellent candidate for such applications due to its wide, reagent detection. The III-Nitride material system is an excellent candidate for such applications due to its wide, direct bandgaps and robust material nature. However, despite many inherent material advantages, the III-Nitride material system typically suffers from a large number of extended defects which degrade material quality and device performance. One technique aimed at reducing defect densities in these materials is lateral epitaxial overgrowth (LEO). In this work, we present a preliminary comparison between AlGaN UV, solar-blind p-i-n photodiodes fabricated form LEO GaN and non-LEO GaN. Improvements in both responsivity and rejection ratio are observed, however, further device improvements are necessary. For these, we focus on the optimization of the p- i-n structure and a reduction in contact resistivity to p- GaN and p-AlGaN layers. By improving the structure of the device, GaN p-i-n photodiodes were fabricated and demonstrate 86 percent internal quantum efficiency at 362 nm and a peak to visible rejection ratio of 105. Contact treatments have reduced the contact resistivity to p-GaN and p-AlGaN by over one order of magnitude form our previous results.

Paper Details

Date Published: 13 April 2000
PDF: 8 pages
Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382126
Show Author Affiliations
Peter M. Sandvik, Northwestern Univ. (United States)
Danielle Walker, Northwestern Univ. (United States)
Patrick Kung, Northwestern Univ. (United States)
Kan Mi, Northwestern Univ. (United States)
Fatemeh Shahedipour, Northwestern Univ. (United States)
Vipan Kumar, Northwestern Univ. (United States)
Xinghong Zhang, Northwestern Univ. (United States)
Jacqueline E. Diaz, Northwestern Univ. (United States)
Christopher Louis Jelen, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 3948:
Photodetectors: Materials and Devices V
Gail J. Brown; Manijeh Razeghi, Editor(s)

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